EL SEGUNDO, Calif. March 2003 - International Rectifier, IR®, (NYSE: IRF) today introduces a new 600V HEXFET® power MOSFET family with fast body diode characteristics tailored for soft switching applications such as the zero voltage switching (ZVS) circuits. ZVS is a technique used to maximize efficiency and enable higher power output in switch mode power supply (SMPS) circuits in today's high speed, broad bandwidth telecommunications and data communications systems where efficiency and reliability is of the greatest importance.

The fast body diode characteristic in the L Series HEXFET MOSFETs eliminates the need for additional Schottky and HV diodes in ZVS circuits, reducing component count, and shrinking space. The new devices enhance system reliability since the internal body diode is active and carries current for a portion of the duty cycle, unlike bridge or power factor correction circuits where the devices are usually hard-switched. The turn on losses are virtually eliminated in ZVS power supply designs by turning-on the MOSFETs when its integral body diode is conducting.

"IR's L Series MOSFETs have significantly reduced switching and overall losses, so power supplies can be designed to operate at higher frequencies, reducing passive component size and increasing power density," said Bhasy Nair, International Rectifier Marketing Manager for the AC-DC Sector.

The maximum reverse recovery time for the body diodes in the L series devices is less than 250ns, and even shorter for lower-current devices. This lower reverse recovery period ensures that the integral body diode is completely recovered from a conduction state to a blocking state before a high voltage is applied to the device during turn off operation.

"In most cases, the new L Series MOSFETs offer higher avalanche ratings and improved gate-to-source charge and gate-to-drain charge ratios to minimize shoot-through conditions and simplify drive circuits," Nair added.

New 600V L series MOSFETs	Voltage(V)	RDS(ON) max (W)	ID @ 25°C(A)	ID @ 100°C(A)	Trr Max. ns	Qg(nC) Max	dV/dt(V/ns)	Rth j-c(°C/W)	Package
IRFPS38N60L	600	0.150	38	24	250	320	13	0.22	Super-247™
IRFPS29N60L	600	0.210	29	18	190	220	12	0.26	Super-247
IRFP26N60L	600	0.235	26	17	250	180	21	0.27	TO-247
IRFP21N60L	600	0.320	21	13	240	150	11	0.38	TO-247
IRFP15N60L	600	0.460	15	9.5	200	100	10	0.40	TO-247
IRFB16N60L	600	0.460	16	10	200	100	10	0.40	TO-220

Availability and Pricing

The new 600V HEXFET® power MOSFETs with fast body diodes are available immediately. Pricing begins at US $1.59 each for the IRFB16N60L in 10,000-unit quantities.

High Resolution JPEGs are available in the Press Room.