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IR’s New Family of 30 V DirectFET® MOSFETs for Synchronous Buck Converter Designs Achieve Higher Levels of Performance and Current Density
EL SEGUNDO, Calif. — International Rectifier, IR® (NYSE: IRF), a world leader in power management technology, today introduced a family of 30 V DirectFET® MOSFETs optimized for synchronous buck converter designs for notebook computers, server CPU power, graphics, and memory voltage regulator applications.
The family of new devices combines IR’s latest generation 30 V HEXFET® power MOSFET silicon and advanced DirectFET packaging technology to achieve a 40 percent smaller footprint compared to a standard SO-8 device, and features a slim 0.7mm profile. The new generation 30 V devices achieve very low on-state resistance (RDS(on)) while minimizing gate charge (Qg) and gate-to-drain charge (Qgd) together with ultra-low package inductance to reduce both conduction and switching losses.
“By leveraging our benchmark power MOSFET silicon and DirectFET packaging, the new 30 V devices are characterized with very low RDS(on), Qg and Qgd to deliver increased efficiency and thermal performance over the entire load. This also allows operation up to 25A per phase, while maintaining the small form factor of a single control and a single synchronous MOSFET,” said Jeff Sherman, IR’s senior product marketing manager for Enterprise Power Products.
The IRF6724M, IRF6725M, IRF6726M, and IRF6727M are characterized with very low RDS(on) making them well suited for high current synchronous MOSFETs. These new devices have a common MT and MX footprint as previous generation devices to allow easy migration into applications where increased current levels or improved thermal performance is required.
The very low Qg and Qgd offered by the IRF6721S, IRF6722S and IRF6722M make these devices ideally suited for control MOSFETs and are available in SQ, ST, and MP footprints for greater design flexibility.
Specifications
| Part Number |
BVDSS
(V) |
RDS(on) typ
@10V (mOhms) |
RDS(on) typ
@4.5V (mOhms) |
QG typ
(nC) |
QGD typ
(nC) |
DirectFET Outline Code |
| IRF6721S |
30 |
5.1 |
8.5 |
11 |
3.7 |
SQ |
| IRF6722S |
30 |
4.7 |
8.0 |
11 |
4.1 |
ST |
| IRF6722M |
30 |
4.7 |
8.0 |
11 |
4.3 |
MP |
| IRF6724M |
30 |
1.9 |
2.7 |
33 |
10 |
MX |
| IRF6725M |
30 |
1.7 |
2.4 |
36 |
11 |
MX |
| IRF6726M |
30 |
1.3 |
1.9 |
51 |
16 |
MT |
| IRF6727M |
30 |
1.2 |
1.8 |
49 |
16 |
MX |
Availability and Pricing
Pricing for the IRF6724MTR1PbF begins at US $1.10; IRF6725MTR1PbF at US $1.25, IRF6726MTR1PbF at US $1.45 and IRF6727MTR1PbF at US $1.50, each in 10,000-unit quantities. The IRF6721STR1PbF begins at US $0.60; IRF6722STR1PbF at US $0.70 and IRF6722MTR1PbF at US $0.75 each in 10,000-unit quantities. Production orders are available immediately. The devices are RoHS compliant and prices are subject to change.
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