EL SEGUNDO, Calif. — International Rectifier, IR® (NYSE: IRF), a world leader in power management technology, today introduced a pair of efficient, reliable ultra-fast Trench Insulated Gate Bipolar Transistors (IGBTs) optimized for induction heating and resonant switching applications such as welding and high power rectification.

The new 1200 V IGBTs utilize IR’s proven thin-wafer trench technology to offer critical performance benefits including low VCE(on) and ultra-fast switching to reduce power dissipation and achieve higher power density. In addition, devices feature a 1300 V repetitive peak rating for added system reliability. The IGBTs are co-packaged with a low forward-voltage high peak current soft forward-recovery diode optimized for resonant zero current turn-on operation.

“With their rugged reliability, and higher power density and efficiency, IR’s new 1200 V IGBTs are ideally suited to induction heating and resonant applications,” said Llewellyn Vaughan-Edmunds, IGBT product marketing manager, IR’s Energy Saving Products Business Unit.

These new IGBTs complement IR’s family of IGBTs for motor drive and hard switching applications. IR’s focus on power applications allows for optimization of devices to meet the technical requirements of various power systems.

Specifications

Part Number	Package	BV	I(nom)	Vceon	Rth(j-c)	Type
IRG7PH35UD1	TO247 - Copack	1200	20	1.9	0.70 oC/W	Ultrafast
IRG7PH42UD1	TO247 - Copack	1200	30	1.7	0.39 oC/W	Ultrafast

Datasheets available via the part number links found above.

Availability and Pricing

Pricing begins at US $2.76 each for the IRG7PH35UD1PbF and US $3.98 each for the IRG7PH42UD1-EP in 10,000-unit quantities. Production quantities are available immediately. Prices are subject to change.