International Rectifier MOSFET drivers are designed to work seamlessly with the International Rectifier multiphase PWM controllers to provide a well matched VR solution offering flexibility in power train component selection. The drivers switch both high and low side FETs of a synchronous buck configuration from one single device package.

• Innovative features enable improvements in VR efficiency
  • Unique fast tri-level PWM signaling scheme for rapid switching & disable of MOSFETs and fast phase shedding
  • Flexibility in gate drive voltages and fast transition times
• Highly reliable adaptive anti-shoot-through circuit to minimize the dead time and prevent cross conduction of the external FETs
  • Accurate, differential comparators to measure phase and gate voltages, compared to industry standard self-biased single ended comparators
  • Design ensures that MOSFET body diode conduction time is reduced
• Single PWM pin to disable the device
  • Eliminates the need for extra trace routing found in traditional drivers using an ODB pin and allows control over each phase
• Large sink current capability for the low side MOSFET to reduce the possibility of shoot-through
• Unique anti-ringing blanking logic
  • Ensures that ringing nodes do not create false gate drive triggering
• Available in thermally enhanced DFN packages for higher switching frequency applications

The VR designer can select a driver optimized for the end application and the type of MOSFETs used in the power train. 

* - Variable Gate Drive is used to enhance efficiency as the load current changes

The following MOSFET drivers offer cost/performance tradeoffs in footprint compatible packages.  Please refer to the data sheet for exact pins, layout and features.

• CHL8510 and CHL8511
• CHL8515, CHL8505 and CHL8550